Paper
16 January 2003 3-D, Self-aligned, Micro-assembled, Electrical Interconnects for Heterogeneous Integration
Trent Huang, Erik Nilsen, Matt Ellis, Kabseog Kim, Ken Tsui, George D. Skidmore, Chuck Goldsmith, Arunkumar Nallani, Jeong-Bong Lee
Author Affiliations +
Abstract
It is of great interest to develop an efficient and reliable manufacturing approach that allows for the integration of microdevices each of which is optimally fabricated using a different process. We present a new method to achieve electrical and mechanical interconnects for use in heterogeneous integration. This method combines metal reflow and a self-aligned, 3-D microassembly approach. The results obtained so far include a self-aligned, 3-D assembly of MEMS to MEMS, post-processing which selectively deposited indium on 50 μm-thick MEMS structures, and reflow tests of indium-on-gold samples demonstrating 15-45 mΩ resistances for contact areas ranging from 100 to 625 μm2. 3-D microassembly coupled with metal reflow allows for the batch processing of a large number of heterogeneous devices into one system without sacrificing performance. In addition, its 3-D nature adds a new degree of freedom in system design space. Downward scalability of the method is also discussed.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Trent Huang, Erik Nilsen, Matt Ellis, Kabseog Kim, Ken Tsui, George D. Skidmore, Chuck Goldsmith, Arunkumar Nallani, and Jeong-Bong Lee "3-D, Self-aligned, Micro-assembled, Electrical Interconnects for Heterogeneous Integration", Proc. SPIE 4981, MEMS Components and Applications for Industry, Automobiles, Aerospace, and Communication II, (16 January 2003); https://doi.org/10.1117/12.476319
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Microelectromechanical systems

Connectors

Indium

Metals

Resistance

Gold

Directed self assembly

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