High-power optical microswitch fabricated by deep reactive ion etching (DRIE)

Kevin R. Cochran; Lawrence Fan; Don L. DeVoe

doi:10.1117/12.477927

21 January 2003 High-power optical microswitch fabricated by deep reactive ion etching (DRIE)

Kevin R. Cochran, Lawrence Fan, Don L. DeVoe

Proceedings Volume 4983, MOEMS and Miniaturized Systems III; (2003) https://doi.org/10.1117/12.477927
Event: Micromachining and Microfabrication, 2003, San Jose, CA, United States

Abstract

Development of a high power optical micro switch fabricated by deep reactive ion etching (DRIE) in silicon on insulator (SOI) substrates is presented. The devices discussed are a key component in a MEMS-based, Naval safety and arming (S&A) system for use in underwater weapons. Two different optical switching techniques are investigated: moving reflector type and moving fiber type. In each technique, a single pair of multimode optical fibers is used to transmit optical power on the order of 1 W at a working wavelength of 810 nm. For the moving reflector type device, an etched vertical sidewall reflector is electrostatically actuated in and out of the optical path between input and output fibers. For the moving fiber type device, v-beam thermal actuators are used to push cantilevered input and output optical fibers in and out of direct alignment with each other. Fabrication is performed on 100 μm thick silicon substrates with fiber alignment channels, reflectors, and actuators being fabricated at the same time with a single etch step. Device concept, modeling, and initial characterization results will be presented.

Citation Download Citation

Kevin R. Cochran, Lawrence Fan, and Don L. DeVoe "High-power optical microswitch fabricated by deep reactive ion etching (DRIE)", Proc. SPIE 4983, MOEMS and Miniaturized Systems III, (21 January 2003); https://doi.org/10.1117/12.477927

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