Paper
25 July 2003 Integration of microscopic gain modeling into a commercial laser simulation environment
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Abstract
We demonstrate the integration of microscopic gain calculation into the laser design tool LaserMOD, which is derived from the Minilase II simulator. A microscopic many body theory of the semiconductor allows for the accurate modeling of the spectral characteristics of the material gain. With such a model, the energetic position of the gain peak, the collision broadening, and therefore, the absolute magnitude of the gain can be predicted based solely on material parameters [2]. In contrast, many simpler approaches rely on careful calibration of model parameters requiring additional effort due to fabrication of samples and experimental studies. In our full scale laser simulation multi dimensional carrier transport, interaction with the optical field via stimulated and spontaneous emission, as well as the optical field itself is computed self consistently. We demonstrate our approach on an example of a Fabry-Perot laser structure with GaInAsP multiple quantum wells for 1.55 μm emission wavelength.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bernhard Grote, Evan K. Heller, Robert Scarmozzino, Joerg Hader, Jerome V. Moloney, and Stephan W. Koch "Integration of microscopic gain modeling into a commercial laser simulation environment", Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); https://doi.org/10.1117/12.487809
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Cited by 2 scholarly publications.
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KEYWORDS
Quantum wells

Optical simulations

Scattering

Calibration

Absorption

Semiconductor lasers

Fabry–Perot interferometers

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