Paper
17 June 2003 Wavelength tuning of laser diodes using hydrostatic pressure
Filip Dybala, Pawel Adamiec, Artem Bercha, Roland Bohdan, Witold Trzeciakowski
Author Affiliations +
Abstract
Direct bandgap of most III-V semiconductors (AlGaAs, InGaAs, InGaP, InAs) increases with hydrostatic pressure at the rate of about 10 meV per kbar. Thus the emission wavelength of semiconductor lasers shifts to the blue under the application of high pressure. We demonstrate that this effect can be used for wavelength tuning of laser diodes in a very wide spectral range. Using the specially designed liquid pressure cell working up to 20 kbar the 1550 nm laser was tuned down to 1270 nm, the 1300 nm laser was tuned down to 1100 nm, and the 980 nm laser was tuned down to 840 nm. The emitted light passes through the sapphire window or through the fiber directly coupled to the laser. The threshold current and the quantum efficiency for the 980 nm laser remained constant with pressure, for the two other lasers the thresholds decreased with pressure. Thus we obtained the constant emission power in the full tuning range. We hope that this compact device will find applications as a tool for characterization of some optical network devices or parts of optical transmission lines.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Filip Dybala, Pawel Adamiec, Artem Bercha, Roland Bohdan, and Witold Trzeciakowski "Wavelength tuning of laser diodes using hydrostatic pressure", Proc. SPIE 4989, Optical Devices for Fiber Communication IV, (17 June 2003); https://doi.org/10.1117/12.501117
Lens.org Logo
CITATIONS
Cited by 12 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Laser damage threshold

Semiconductor lasers

Diodes

Liquids

Fiber coupled lasers

Wavelength tuning

Fiber lasers

Back to Top