Property of single-crystalline Si TFTs fabricated with u-Czochralski (grain filter) process

Ryoichi Ishihara; Paul Ch. van der Wilt; Barry D. van Dijk; J. W. Metselaar; C. I. M. Beenakker

doi:10.1117/12.482582

16 May 2003 Property of single-crystalline Si TFTs fabricated with μ-Czochralski (grain filter) process

Ryoichi Ishihara, Paul Ch. van der Wilt, Barry D. van Dijk, J. W. Metselaar, C. I. M. Beenakker

Proceedings Volume 5004, Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas; (2003) https://doi.org/10.1117/12.482582
Event: Electronic Imaging 2003, 2003, Santa Clara, CA, United States

Abstract

Formation of TFTs inside location-controlled large Si grains with a low temperature process is an attractive approach for realizing system-circuit integration with displays on a large glass substrate. Local structural variations of the substrate using photolithography allows an accurate location-control of the large Si grains in excimer-laser crystallization. Single-crystalline Si (c-Si) TFTs was formed inside a location-controlled large (6 μm) grain by μ-Czochraski process of a-Si film. The c-Si TFTs showed field effect mobility of 450 cm²/Vs on average. Crystallization characteristics, spread of the TFT characteristics and effects of process parameters will be reviewed and discussed.

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Ryoichi Ishihara, Paul Ch. van der Wilt, Barry D. van Dijk, J. W. Metselaar, and C. I. M. Beenakker "Property of single-crystalline Si TFTs fabricated with μ-Czochralski (grain filter) process", Proc. SPIE 5004, Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas, (16 May 2003); https://doi.org/10.1117/12.482582

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