Paper
11 June 2003 Influence of ZnSe cap layer growth on the morphology and Cd distribution in CdSe/ZnSe quantum dot structures
D. Litvinov, A. Rosenauer, D. Gerthsen, P. Kratzert, Michael Rabe, Fritz Henneberger
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Abstract
The morphology and Cd distribution in CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy is compared before and after the ZnSe cap layer deposition. Atomic force microscopy is applied to study the surface topography of uncapped samples without removing the samples from the ultra-high vacuum. The capped structures are analyzed by transmission electron microscopy. It is observed that only a highly specific growth procedure involving a thermal activation step leads to a Stranski-Krastanow morphology with three-dimensional CdSe islands on a thin wetting layer which are preserved after the overgrowth with ZnSe.
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D. Litvinov, A. Rosenauer, D. Gerthsen, P. Kratzert, Michael Rabe, and Fritz Henneberger "Influence of ZnSe cap layer growth on the morphology and Cd distribution in CdSe/ZnSe quantum dot structures", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.510547
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KEYWORDS
Cadmium

Transmission electron microscopy

Quantum dots

Atomic force microscopy

Chemical analysis

Molecular beam epitaxy

Reflection

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