Magnetoresistance in long InSb nanowires

Sergei V. Zaitsev-Zotov; Yu. A. Kumzerov; Yu. A. Firsov; P. Monceau

doi:10.1117/12.514512

11 June 2003 Magnetoresistance in long InSb nanowires

Sergei V. Zaitsev-Zotov, Yu. A. Kumzerov, Yu. A. Firsov, P. Monceau

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.514512
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

Magnetoresistance of long correlated nanowires of degenerate semiconductor InSb in asbestos matrix (wire diameter is around 50 Å, length 0.1 - 1 mm) is studied over temperature range 2.3 - 300 K. At zero magnetic field the electric conduction G and current-voltage characteristics of such wires obeys the power laws G varies direct as T^α, I varies direct as V^β, expected for one-dimensional electron systems. The effect of magnetic field corresponds to 20% growth of the exponents α, β at H = 10 T that may result from breaking of the spin-charge separation in the one-dimensional electron system.

Citation Download Citation

Sergei V. Zaitsev-Zotov, Yu. A. Kumzerov, Yu. A. Firsov, and P. Monceau "Magnetoresistance in long InSb nanowires", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.514512

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