Many-body lines in tunneling spectra of Al/-GaAs junctions near resonant polaron threshold

I. N. Kotel'nikov; S. E. Dizhur; F. V. Shtrom

doi:10.1117/12.513913

11 June 2003 Many-body lines in tunneling spectra of Al/-GaAs junctions near resonant polaron threshold

I. N. Kotel'nikov, S. E. Dizhur, F. V. Shtrom

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.513913
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

A remarkable change of LO-phonon line for tunneling from metal to 2DEG, in comparison with 3D-case, was observed. It was shown that the line shapes and the amplitudes of LO-phonon and zero-bias anomaly in tunneling spectra of Al/δ-GaAs junctions depended on magnetic field in-plane of the 2DEG. The parameters of the lines were changed when threshold for resonant intersubband polaron in δ-layer was exceeded.

Citation Download Citation

I. N. Kotel'nikov, S. E. Dizhur, and F. V. Shtrom "Many-body lines in tunneling spectra of Al/-GaAs junctions near resonant polaron threshold", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.513913

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