Origin of the 1/f noise in GaN-based HFETs: Is it tunneling?

Michael E. Levinshtein

doi:10.1117/12.514280

11 June 2003 Origin of the 1/f noise in GaN-based HFETs: Is it tunneling?

Michael E. Levinshtein

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.514280
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

The nature of the 1/f noise in GaN/GaAlN Heterostructure Field Effect Transistors (HFETs) has been discussed. New experimental results on the 1/f noise in GaN/GaAlN HFETs and different models on the flicker noise have been also described. It has been demonstrated that the 1/f noise in GaN/GaAlN HFETs might be linked to the electron tunneling from the 2D gas into the tail states in GaN or AlGaN layers.

Citation Download Citation

Michael E. Levinshtein "Origin of the 1/f noise in GaN-based HFETs: Is it tunneling?", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.514280

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