Resonant acceptor states in delta-doped SiGe nanostructures

A. A. Prokofiev; M. A. Odnoblyudov; Irina N. Yassievich; K. A. Chao

doi:10.1117/12.514450

11 June 2003 Resonant acceptor states in delta-doped SiGe nanostructures

A. A. Prokofiev, M. A. Odnoblyudov, Irina N. Yassievich, K. A. Chao

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.514450
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

Resonant acceptor states induced by internal strain in Si/SiGe/Si quantum wells delta-doped with boron have been investigated theoretically. Sample design of Si/SiGe/Si MQW structures for resonant state THz laser is suggested.

Citation Download Citation

A. A. Prokofiev, M. A. Odnoblyudov, Irina N. Yassievich, and K. A. Chao "Resonant acceptor states in delta-doped SiGe nanostructures", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.514450

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