Resonant tunneling metal-oxide-silicon nanostructure

Galina G. Kareva; M. I. Vexler; I. Grekhov; A. F. Shulekin

doi:10.1117/12.514615

11 June 2003 Resonant tunneling metal-oxide-silicon nanostructure

Galina G. Kareva, M. I. Vexler, I. Grekhov, A. F. Shulekin

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.514615
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

Some evidences for an ability of a metal-oxide-silicon (MOS) structure, widely used in the current integrated circuit electronics, to operate as a resonant tunneling diode are discussed. The energy band diagram of the MOS structure based on a highly doped p-Si (N_A in the range of 10¹⁸ - 10²⁰ cm^-3) with an oxide thickness in the tunnel transparent range of 1 - 4 nm in reverse bias presents an asymmetrical double barrier with a quantum well of variable depth. Both the calculated and measured current-voltage characteristics of such nanostructures exhibit resonant tunneling features, such as steps and peaks, attesting electron resonant tunneling transport. The nanostructures have their origin in design, materials and technologies within the current integrated electronics so that they can be easily combined with its elements on one chip.

Citation Download Citation

Galina G. Kareva, M. I. Vexler, I. Grekhov, and A. F. Shulekin "Resonant tunneling metal-oxide-silicon nanostructure", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.514615

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