Paper
11 June 2003 Shallow acceptors in Si/SiGe QW heterostructures
D. V. Kozlov, Vladimir Ya. Aleshkin, Vladimir I. Gavrilenko
Author Affiliations +
Abstract
The new theoretical method for calculation of acceptor spectra in Si/SiGe heterostructures using 6x6 Luttinger Hamiltonian, taking into acount the anisotropy effects has been developed.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. V. Kozlov, Vladimir Ya. Aleshkin, and Vladimir I. Gavrilenko "Shallow acceptors in Si/SiGe QW heterostructures", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.513632
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KEYWORDS
Quantum wells

Heterojunctions

Boron

Silicon

Chemical analysis

Anisotropy

Ions

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