Surface morphology evolution at early stages of CaF2(110) epitaxial growth on Si(001)

Nikolai S. Sokolov; S. M. Suturin; V. P. Ulin

doi:10.1117/12.511273

11 June 2003 Surface morphology evolution at early stages of CaF₂(110) epitaxial growth on Si(001)

Nikolai S. Sokolov, S. M. Suturin, V. P. Ulin

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.511273
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

The initial stage studies of CaF₂ molecular beam epitaxy (MBE) on Si(111) provide a lot of new information important for understanding basic mechanisms of the heteroepitaxy and interface formation between dissimilar materials. Unlike CaF₂ on Si(111) system, which has been thoroughly studied by many groups, the interaction of CaF₂ molecules with a technologically important Si(001) surface until recently remained almost unexplored except for the TEM and STM studies, where strong anisotropy at the initial stages of CaF₂ growth on Si(001) was observed. In our previous work, it was found that a so-called "wetting layer" forms during the initial stage of fluorite growth at above 650°C. This layer influences much the following stages of fluorite growth and determines unusual (110)-orientation of CaF₂ nanostructures, grown on Si(001) surface. The wetting layer formation was accompanied by transformation of the initially two-domain (2x1 and 1x2) silicon surface to single-domain. However, microscopic mechanism of this transformation remained unclear. In this work, we used atomic force microscopy to thoroughly investigate the evolution of the silicon substrate surface during the wetting layer formation. We have found the basic microscopic mechanism governing the transition between single- and two-domain surface morphology and revealed more details on nucleation and evolution of CaF₂ linear-ridge-like nanostructures described in our previous work as appearing at higher surface coverage.

Citation Download Citation

Nikolai S. Sokolov, S. M. Suturin, and V. P. Ulin "Surface morphology evolution at early stages of CaF₂(110) epitaxial growth on Si(001)", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.511273

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available