Tunnelling of photogenerated holes through landau levels in GaAs/AlGaAs double barrier diodes

Andres Vercik; M. J.S.P. Brasil; Y. G. Gobato; G. E. Marques

doi:10.1117/12.514620

11 June 2003 Tunnelling of photogenerated holes through landau levels in GaAs/AlGaAs double barrier diodes

Andres Vercik, M. J.S.P. Brasil, Y. G. Gobato, G. E. Marques

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.514620
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

The experimental observation of Landau levels due to the quantization of the transverse moment of holes in resonant tunneling diodes is reported in this work. At very low bias, the photocurrent versus voltage curves, measured under a magnetic field perpendicular to the barrier planes, exhibited several peaks associated to this phenomenon. The analysis of the peak position as a function of the magnetic field reveals several interesting features as non-parabolicity of the valence band, diamagnetic behavior and repulsion between levels with the same Landau-level index.

Citation Download Citation

Andres Vercik, M. J.S.P. Brasil, Y. G. Gobato, and G. E. Marques "Tunnelling of photogenerated holes through landau levels in GaAs/AlGaAs double barrier diodes", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.514620

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