Variation of in-plane lattices constant of Ge islands during MBE growth on Si and SiO2 surfaces

Alexander I. Nikiforov; V. A. Cherepanov; Oleg P. Pchelyakov

doi:10.1117/12.510552

11 June 2003 Variation of in-plane lattices constant of Ge islands during MBE growth on Si and SiO₂ surfaces

Alexander I. Nikiforov, V. A. Cherepanov, Oleg P. Pchelyakov

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.510552
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

Variations in the lattice constant of Ge film were determined by RHEED in the course of the MBE film growth on the silicon surface. Oscillations of the in-plane atomic cell constant were observed for the Ge film growing according to the 2D mechanism. Variations in the two-dimensional lattice constant at the stage of 2D growth are caused by elastic deformation of edges of two-dimensional islands. It was shown that the germanium film growth on silica, unlike the growth on the pure silicon surface, proceeds without formation of the wetting layer.

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Alexander I. Nikiforov, V. A. Cherepanov, and Oleg P. Pchelyakov "Variation of in-plane lattices constant of Ge islands during MBE growth on Si and SiO₂ surfaces", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.510552

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