Aerial image-based mask inspection: a development effort to detect what might impact printing image quality on wafers

Roman Liebe; Henning Haffner; Shirley Hemar; Anja Rosenbusch; Jerry Xiaoming Chen; Franklin D. Kalk

doi:10.1117/12.483535

2 June 2003 Aerial image-based mask inspection: a development effort to detect what might impact printing image quality on wafers

Roman Liebe, Henning Haffner, Shirley Hemar, Anja Rosenbusch, Jerry Xiaoming Chen, Franklin D. Kalk

Author Affiliations +

Proceedings Volume 5038, Metrology, Inspection, and Process Control for Microlithography XVII; (2003) https://doi.org/10.1117/12.483535
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

The industry roadmap for IC manufacturing at design rules of 90nm and below foresees low k1-factor optical lithography at 193nm exposure wavelength. Aggressive model-based OPC and Phase Shift Mask technology are being used more and more frequently in order to achieve the extremely tight mask CD specifications required by 90nm technology node. State-of-the-art mask inspection is challenged to detect CD defects close to metrology resolution. Inspection of OPC and PSM masks is critical; OPC feature dimensions are usually near or below the resolution limits of mask exposure. In addition, chrome defects can be semitransparent and change the intensity of light on the wafer. In this paper aerial-image based mask inspection is investigated and presented. The concept inspects a given mask based on its aerial image with selected wafer exposure conditions, thus 'finds only defect which will print'. This paradigm shift in mask inspection philosophy provides the unique opportunities of verifying and controlling the entire aerial image generated by the inspected mask. As reticle enhancement techniques like OPC and EAPSM are designed to enhance the aerial image of a mask, this concept offers a comprehensive way of inspecting these techniques. The focus of the inspection is shifted from detecting every single minor change on mask to detecting what on mask could possibly impact the printing image quality on the wafer. The focus of the paper is to analyze the impact of different exposure and lithography process conditions onto the inspection sensitivity. The standard defect sensitivity and runability test mask UIS10 and other advanced real production masks were printed under different exposure and process conditions resembling production-worthy 193nm lithography processes. The masks then were inspected using Etec's aerial image-based inspection concept. Detection sensitivities and CD variations on the wafer are analyzed and compared.

Citation Download Citation

Roman Liebe, Henning Haffner, Shirley Hemar, Anja Rosenbusch, Jerry Xiaoming Chen, and Franklin D. Kalk "Aerial image-based mask inspection: a development effort to detect what might impact printing image quality on wafers", Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); https://doi.org/10.1117/12.483535

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Inspection

Photomasks

Semiconducting wafers

Reticles

Optical proximity correction

Image quality

Image enhancement

Show All Keywords

Keywords/Phrases

Search In:

Publication Years