Overcoat materials for acrylate resists to enhance their resolution

Koji Nozaki; Miwa Igarashi; Ei Yano; Hajime Yamamoto; Satoshi Takechi; Isamu Hanyu

doi:10.1117/12.487727

12 June 2003 Overcoat materials for acrylate resists to enhance their resolution

Koji Nozaki, Miwa Igarashi, Ei Yano, Hajime Yamamoto, Satoshi Takechi, Isamu Hanyu

Proceedings Volume 5039, Advances in Resist Technology and Processing XX; (2003) https://doi.org/10.1117/12.487727
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

We have developed a series of water developable overcoat materials to enhance the resolution of acrylate resists. The overcoat materials are water solutions that consist of a water-soluble polymer, a cross-linker, and non-ionic surfactant with a small amount of IPA (2-propanol). They exhibit affinity for acrylate resists that make them penetrate and react at the surface of the patterned resists. The resolution of the resist can be improved below the resolution limit of the exposure wavelengths by using the optimized materials. Additionally, the line edge roughness of the resist patterns can be reduced with only a small change in the pattern size when a low baking temperature (<95°C) and/or a small change of the composition of the material is applied. These materials are compatible with both acrylate-based 193-nm chemically amplified resists and PMMA (poly(methyl methacrylate)) resists. This indicates that the reaction can proceed even without acids, which are generally generated from photo acid generators (PAGs). The opitimized material affords sub 100-nm patterns for hole and L/S (line and space) with an alicyclic acrylate resist. A 28-nm shrinkage is also obtained with a PMMA resist to formulate the 68-nm trench pattern.

Citation Download Citation

Koji Nozaki, Miwa Igarashi, Ei Yano, Hajime Yamamoto, Satoshi Takechi, and Isamu Hanyu "Overcoat materials for acrylate resists to enhance their resolution", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.487727

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