Growth Of Large-Diameter Crystals By Hem Tmfor Optical And Laser Applications

C. P. Khattak; F. Schmid

doi:10.1117/12.964616

26 December 1984 Growth Of Large-Diameter Crystals By Hem Tmfor Optical And Laser Applications

C. P. Khattak, F. Schmid

Proceedings Volume 0505, Advances in Optical Materials; (1984) https://doi.org/10.1117/12.964616
Event: 28th Annual Technical Symposium, 1984, San Diego, United States

Abstract

The Heat Exchanger Method (HEM), a new crystal growth process, is in commercial production for 20 cm diameter sapphire crystals and 40 cm diameter silicon ingots for optical applications. The simplicity of the HEM combined with a very high degree of control of the submerged, solid-liquid interface allows growth of high-quality crystals. The HEM is also being adapted for the growth of Co:MgF₂, Ti:A1₂0₃ and Cr:A1₂0₃ crystals for laser applications.

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C. P. Khattak and F. Schmid "Growth Of Large-Diameter Crystals By Hem Tmfor Optical And Laser Applications", Proc. SPIE 0505, Advances in Optical Materials, (26 December 1984); https://doi.org/10.1117/12.964616

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