Nonelastic electron scattering in HgTe

O. P. Malyk

doi:10.1117/12.502180

14 April 2003 Nonelastic electron scattering in HgTe

O. P. Malyk

Proceedings Volume 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2003) https://doi.org/10.1117/12.502180
Event: Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2002, Kiev, Ukraine

Abstract

By exact solution of stationary Boltzmann equation the nonequilibrium charge carrier distribution function is obtained. In the temperature range 4.2 - 300 K the main electron scattering mechanism are considered taking into account the nonelastic electron interaction with optical vibrations of the crystal lattice.

Citation Download Citation

O. P. Malyk "Nonelastic electron scattering in HgTe", Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); https://doi.org/10.1117/12.502180

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