Uniform acceptor distribution in neutron-transmutation-doped far-infrared p-Ge lasers

E. W. Nelson; M. V. Dolguikh; E. S. Flitsiyan; A. V. Muravjov; R. E. Peale; S. H. Kleckley; W. G. Vernetson; V. Z. Tsipin

doi:10.1117/12.485798

21 August 2003 Uniform acceptor distribution in neutron-transmutation-doped far-infrared p-Ge lasers

E. W. Nelson, M. V. Dolguikh, E. S. Flitsiyan, A. V. Muravjov, R. E. Peale, S. H. Kleckley, W. G. Vernetson, V. Z. Tsipin

Author Affiliations +

Proceedings Volume 5087, Laser Systems Technology; (2003) https://doi.org/10.1117/12.485798
Event: AeroSense 2003, 2003, Orlando, Florida, United States

Abstract

A neutron transmutation doped (NTD) far-infrared p-Ge laser crystal and a melt-grown p-Ge laser are analyzed and compared. Though the doping level in the NTD active crystal is twice lower than optimal, the laser performance is comparable to that produced from high-quality melt-grown crystals because of superior dopant uniformity. Compensation was examined by comparing results of neutron activation analysis with majority carrier concentration. Study of impurity breakdown electric field reveals better crystal quality in NTD. The current saturation behavior confirms the expected higher doping uniformity over melt grown laser rods.

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E. W. Nelson, M. V. Dolguikh, E. S. Flitsiyan, A. V. Muravjov, R. E. Peale, S. H. Kleckley, W. G. Vernetson, and V. Z. Tsipin "Uniform acceptor distribution in neutron-transmutation-doped far-infrared p-Ge lasers", Proc. SPIE 5087, Laser Systems Technology, (21 August 2003); https://doi.org/10.1117/12.485798

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