Bispectrum of the 1/f noise in diodes on quantum dots and wells

Arkady V. Yakimov; Alexander V. Belyakov; Mikhail Yu. Perov; Lode J. K. Vandamme

doi:10.1117/12.499828

8 May 2003 Bispectrum of the 1/f noise in diodes on quantum dots and wells

Arkady V. Yakimov, Alexander V. Belyakov, Mikhail Yu. Perov, Lode J. K. Vandamme

Proceedings Volume 5115, Noise and Information in Nanoelectronics, Sensors, and Standards; (2003) https://doi.org/10.1117/12.499828
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States

Abstract

The bispectrum of the 1/f noise is investigated in the present work. For the Gaussian noise it equals zero. LEDs on self-organized InAs/GaAs quantum dots and laser diodes on In_0.2Ga_0.8As/GaAs/InGaP quantum wells made in Russia were tested. The voltage noise was analyzed in a wide interval of currents through the diodes. Estimates of the probability density function and semi-invariants of the noise have not revealed any appreciable deviations from the Gauss law. Noise spectra S_v(f)in the range 1 Hz - 20 kHz were analyzed. In most cases the frequency exponent γ_s of the spectrum is close to one, the Hooge’s parameter α_H has magnitude of the order 10^-4. The bispectrum B_v(f₁,f₂of the noise is a complex function of frequencies f₁ and f₂. Its absolute value is decreasing while moving from the beginning of the frequency plane Of₁f₂. The decrease along the bisector (f₁ = f₂ = f) follows the power law characterized by the frequency exponent γ_B ≈ 1.5 γ_s. The dependence of the "height" of |B_v(f,f)| on the current through the diode is qualitatively similar to this one for the spectrum. The power law describes these dependences, however the exponents are essentially different.

Citation Download Citation

Arkady V. Yakimov, Alexander V. Belyakov, Mikhail Yu. Perov, and Lode J. K. Vandamme "Bispectrum of the 1/f noise in diodes on quantum dots and wells", Proc. SPIE 5115, Noise and Information in Nanoelectronics, Sensors, and Standards, (8 May 2003); https://doi.org/10.1117/12.499828

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