Chemical etching effects in porous silicon layers

Daniel Navarro-Urrios; Cecilia Perez-Padron; Eduardo Lorenzo; Néstor E. Capuj; Zeno Gaburro; Claudio J. Oton; Lorenzo Pavesi

doi:10.1117/12.499073

29 April 2003 Chemical etching effects in porous silicon layers

Daniel Navarro-Urrios, Cecilia Perez-Padron, Eduardo Lorenzo, Néstor E. Capuj, Zeno Gaburro, Claudio J. Oton, Lorenzo Pavesi

Author Affiliations +

Proceedings Volume 5118, Nanotechnology; (2003) https://doi.org/10.1117/12.499073
Event: Microtechnologies for the New Millennium 2003, 2003, Maspalomas, Gran Canaria, Canary Islands, Spain

Abstract

We have studied the properties of p⁺-type doped porous silicon, formed by electrochemical etching, when is left in presence of the electrolyte for different post-etching times. Using an interferometric technique, we monitored the formation of the porous silicon layer during the electrochemical treatment as well as the change of its porosity during the post-etch process due to a chemical dissolution mechanism. These data are complemented with a study of the photoluminescence modification for different post-etching times.

Citation Download Citation

Daniel Navarro-Urrios, Cecilia Perez-Padron, Eduardo Lorenzo, Néstor E. Capuj, Zeno Gaburro, Claudio J. Oton, and Lorenzo Pavesi "Chemical etching effects in porous silicon layers", Proc. SPIE 5118, Nanotechnology, (29 April 2003); https://doi.org/10.1117/12.499073

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