The 128x128 MWIR FPA on the base of epitaxial layer MCT grown by MOCVD

K. O. Boltar; N. I. Iakovleva; S. V. Golovin; V. P. Ponomarenko; V. I. Stafeev; I. D. Bourlakov; A. N. Moiseev; A. P. Kotkov; V. V. Dorofeev

doi:10.1117/12.517241

30 September 2003 The 128x128 MWIR FPA on the base of epitaxial layer MCT grown by MOCVD

K. O. Boltar, N. I. Iakovleva, S. V. Golovin, V. P. Ponomarenko, V. I. Stafeev, I. D. Bourlakov, A. N. Moiseev, A. P. Kotkov, V. V. Dorofeev

Author Affiliations +

Proceedings Volume 5126, 17th International Conference on Photoelectronics and Night Vision Devices; (2003) https://doi.org/10.1117/12.517241
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

MWIR 128x128 Focal Plane Array (FPA) performance has been investigated. FPA has been fabricated on the base of HgCdTe active layers grown on (111)B GaAs substrate by Metal Organic Chemical Vapor Deposition (MOCVD). Histograms and diagrams of photodiodes current, responsivity and detectivity have been plotted for FPA with cutoff value 5,1μm at T=200K.

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K. O. Boltar, N. I. Iakovleva, S. V. Golovin, V. P. Ponomarenko, V. I. Stafeev, I. D. Bourlakov, A. N. Moiseev, A. P. Kotkov, and V. V. Dorofeev "The 128x128 MWIR FPA on the base of epitaxial layer MCT grown by MOCVD", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); https://doi.org/10.1117/12.517241

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