Control of side-lobe intensity for attenuated phase-shifting mask in 157-nm lithography

Kunio Watanabe; Eiji Kurose; Toshifumi Suganaga; Toshiro Itani

doi:10.1117/12.504283

28 August 2003 Control of side-lobe intensity for attenuated phase-shifting mask in 157-nm lithography

Kunio Watanabe, Eiji Kurose, Toshifumi Suganaga, Toshiro Itani

Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504283
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan

Abstract

The TaSiOx attenuated phase-shifting mask (Att-PSM) has strong potential for durability against laser irradiation and good lithographic performance in 157 nm lithography. However, the resist resolution limit and depth of focus (DOF) are deteriorated by side-lobe patterns generated near the contact hole. This is because the side-lobe intensity generated near the light-transmitting region becomes larger in sub 100 nm contact holes. To minimize the effect of side-lobes and improve lithographic performance, we evaluated an Att-PSM with a chrome light-shielding layer and optimized the transmittance of its attenuated phase-shifting film. In an optical simulation, we investigated the effect of the side-lobe intensity on the resist region (i.e., a reduction in resist thickness). The light-shielding film was placed on the attenuated phase-shifting film to prevent the side-lobe pattern, and its effect on the imaginary resist pattern was simulated. We found that the distance between the patterning edge of the hole and that of the light-shielding region must be greater than 90 nm to fabricate a 100 nm isolated hole without side-lobe patterns. The side-lobe intensity could be controlled using the chrome-shielding-type Att-PSM, and the lithographic performance (such as resolution limit and DOF) was enhanced.

Citation Download Citation

Kunio Watanabe, Eiji Kurose, Toshifumi Suganaga, and Toshiro Itani "Control of side-lobe intensity for attenuated phase-shifting mask in 157-nm lithography", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504283

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