Abstract
Conventional simulation tools that verify the layout of a subwavelength IC against the silicon it is intended to produce. It reads in the layout and simulates lithographic process effects, including optical, resist and etch effects. Then compares the results -- the simulated "silicon image" -- with the original (intended) layout, reporting out-of-tolerance regions. We here introduce a reverse engineering method that use ready database to simulate unknown pattern. By using this method, you can get more fast and accurate results then conventional simulation tools. We will discuss the advantage and disadvantage of this method and its application.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hung-Liang Huang "Reverse engineering of data simulation", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504255
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KEYWORDS
Optical proximity correction

Reverse engineering

Silicon

Photomasks

Manufacturing

Data acquisition

Databases

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