Paper
6 October 2003 Ultralow-pump-threshold laser diode pumped Cr:LiSAF laser
Author Affiliations +
Proceedings Volume 5137, International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems; (2003) https://doi.org/10.1117/12.517889
Event: International Conference on Lasers, Applications, and Technologies 2002, 2002, Moscow, Russian Federation
Abstract
Operation of Cr:LiSAF laser pumped by 670 nm high brightness single stripe (width of 50 μm) laser diode with pump-threshold as low as 650 μw is reported. The lasing threshold was observed simultaneously with threshold of operation of laser diode. For short pulse generation we designed and tested different multiple quantum well saturable absorbers. The continuous mode-locked operation was achieved with tunability from 846 to 875 nm.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vaclav Kubecek, Rafael Quintero-Torres, and Jean-Claude M. Diels "Ultralow-pump-threshold laser diode pumped Cr:LiSAF laser", Proc. SPIE 5137, International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems, (6 October 2003); https://doi.org/10.1117/12.517889
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Cited by 6 scholarly publications and 1 patent.
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KEYWORDS
Semiconductor lasers

Laser damage threshold

Mirrors

Mode locking

Diodes

Resonators

Laser resonators

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