Electron-beam mask repair with induced reactions

Hans W. P. Koops; Klaus Edinger; Johannes Bihr; Volker A. Boegli; Jens Greiser

doi:10.1117/12.514972

28 May 2003 Electron-beam mask repair with induced reactions

Hans W. P. Koops, Klaus Edinger, Johannes Bihr, Volker A. Boegli, Jens Greiser

Proceedings Volume 5148, 19th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2003) https://doi.org/10.1117/12.514972
Event: 19th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2003, Sonthofen, Germany

Abstract

Electron-beam induced chemical reactions and their applicability to mask repair are investigated. For deposition and chemical etching with a focused electron-beam system, it is required to disperse chemicals in a molecular beam to the area of interest with a well-defined amount of molecules and monolayers per second. For repair of opaque defects the precursor gas reacts with the absorber material of the mask and forms a volatile reaction product, which leaves the surface. In this way the surface atoms are removed layer by layer. For clear defect repair, additional material, which is light absorbing in the UV, is deposited onto the defect area. This material is rendered as a nanocrystalline deposit from metal containing precursors. An experimental electron-beam mask repair system is developed and used to perform exploratory work applicable to photo mask, EUV mask, EPL and LEEPL stencil mask repair. The tool is described and specific repair actions are demonstrated. Platinum deposited features with lateral dimensions down to 20 nm demonstrate the high resolution obtainable with electron beam induced processes, while AFM and AIMS measurements indicate, that specifications for mask repair at the 70 nm device node can be met. In addition, examples of etching quartz, TaN, and silicon carbide stencil masks are given.

Citation Download Citation

Hans W. P. Koops, Klaus Edinger, Johannes Bihr, Volker A. Boegli, and Jens Greiser "Electron-beam mask repair with induced reactions", Proc. SPIE 5148, 19th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (28 May 2003); https://doi.org/10.1117/12.514972

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