Multiple high-period-accuracy gratings fabricated by holographic exposure and ion-beam etching with nanometer depth accuracy in silicon

Thomas J. Haensel; Axel Schindler; Brian Dissing

doi:10.1117/12.508286

22 December 2003 Multiple high-period-accuracy gratings fabricated by holographic exposure and ion-beam etching with nanometer depth accuracy in silicon

Thomas J. Haensel, Axel Schindler, Brian Dissing

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Proceedings Volume 5180, Optical Manufacturing and Testing V; (2003) https://doi.org/10.1117/12.508286
Event: Optical Science and Technology, SPIE's 48th Annual Meeting, 2003, San Diego, California, United States

Abstract

Diffraction gratings can be manufactured in a large variety of ways depending on the required grating characteristics. In this work we have concentrated on surface relief gratings etched into large blocks of silicon with a polished surface. The applications for this kind of gratings are for mirrors and monochromators in the beam-line of a synchrotron. This application requires gratings with sub 100 nm etching depths -- in some cases even sub 10 nm -- with a very high control of the grating period and etching depth over the entire gratings ranging from 90 mm x 30 mm to 200 mm x 30 mm with useful areas from 80 mm x 10 mm to 190 mm x 10 mm. In some cases there are two grating tracks with different structure design on the same Si substrate. In this work we have shown that a combination of holographic exposure in a standard photo-resist and ion beam etching with a dwell time mode using a sub-aperture gaussian shaped removal function is an excellent fabrication procedure to meet the tight tolerances for this special type of gratings. We fabricate gratings for spectral ranges from 10 - 20 eV to 1000 - 2000 eV with etching depths ranging from 100 nm to a few nm and characterize them thoroughly by Atomic Force Microscopy.

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Thomas J. Haensel, Axel Schindler, and Brian Dissing "Multiple high-period-accuracy gratings fabricated by holographic exposure and ion-beam etching with nanometer depth accuracy in silicon", Proc. SPIE 5180, Optical Manufacturing and Testing V, (22 December 2003); https://doi.org/10.1117/12.508286

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