Nature of nonlinearity of I-V characteristics in CdTe:Cl single crystals

Andriy V. Sukach; Volodymyr V. Tetyorkin; Volodymyr D. Popovych; Volodymyr M. Popov

doi:10.1117/12.507424

20 January 2004 Nature of nonlinearity of I-V characteristics in CdTe:Cl single crystals

Andriy V. Sukach, Volodymyr V. Tetyorkin, Volodymyr D. Popovych, Volodymyr M. Popov

Proceedings Volume 5198, Hard X-Ray and Gamma-Ray Detector Physics V; (2004) https://doi.org/10.1117/12.507424
Event: Optical Science and Technology, SPIE's 48th Annual Meeting, 2003, San Diego, California, United States

Abstract

The current-voltage characteristics are investigated in single crystals of CdTe doped with Cl. Measured samples were ntype conductivity with resistivity ρ=(0.5-2.0)×10⁸ Ohm×cm, electron concentration n=(0.5÷2.0)×108 cm^-3 and electron mobility μ=280÷300 cm²/Vxs. Experimental data are explained in the framework of theory of highly doped and highly compensated (HDHC) semiconductors. The mobility-lifetime product measured at room temperature is found to be of the order of (1÷5)x 10^-4 cm²xV^-1. It means that this material can be used for manufacture of X-ray detectors.

Citation Download Citation

Andriy V. Sukach, Volodymyr V. Tetyorkin, Volodymyr D. Popovych, and Volodymyr M. Popov "Nature of nonlinearity of I-V characteristics in CdTe:Cl single crystals", Proc. SPIE 5198, Hard X-Ray and Gamma-Ray Detector Physics V, (20 January 2004); https://doi.org/10.1117/12.507424

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