Elaboration of new uncooled detector materials highly sensitive in the near-IR region

Yuriy P. Gnatenko; Yuri P. Piryatinski; Roman V. Gamernyk; Ivan O. Faryna; Petro M. Bukivskij; Stepan Yu. Paranchych; Lidia D. Paranchych

doi:10.1117/12.516446

8 December 2003 Elaboration of new uncooled detector materials highly sensitive in the near-IR region

Yuriy P. Gnatenko, Yuri P. Piryatinski, Roman V. Gamernyk, Ivan O. Faryna, Petro M. Bukivskij, Stepan Yu. Paranchych, Lidia D. Paranchych

Author Affiliations +

Proceedings Volume 5209, Materials for Infrared Detectors III; (2003) https://doi.org/10.1117/12.516446
Event: Optical Science and Technology, SPIE's 48th Annual Meeting, 2003, San Diego, California, United States

Abstract

The studies of the optical and photoelectric properties of Cd_1-xHg_xTe:V (x≤0.02, N_v = 10¹⁹ cm^-3) were carried out. The investigated semiinsulating (ρ = 10⁸ - 10⁹ Ωxcm) crystals were grwn by the vertical Bridgman technique. All obtained samples had n-type conductivity. The measurements of absorption, photoluminescence and photodiffusion spectra allowed us to obtain the information about the impurity centers and intrinsic defects. The nature and the position of their energy levels with respect to the crystal energy band were determined. It was shown that the impurity centers are in the two- and three-ionized states. In the case of V²⁺ ions excited ⁴T₁(F)- and ⁴A₂(F)-states for Cd_1-xHg_xTe:V (x =0.018) crystal is in resonance with the conduction band. It was found that for these crystals the photogeneration of electrons from impurity levels are determined both by direct photoionization and autoionization of electrons from excited states to the conduction band. It was found that the photosensitivity region for Cd_1-xHg_xTe:V crystals is protracted up to 1800 nm. The dynamic of electronic processes with the participation of impurity and intrinsic defects were investigated using a time-resolved photoelectric spectroscopy. It was shown that the electric processes, which determine the photosensitivity region of this crystal is high speed and corresponds to the subnanosecond region.

Citation Download Citation

Yuriy P. Gnatenko, Yuri P. Piryatinski, Roman V. Gamernyk, Ivan O. Faryna, Petro M. Bukivskij, Stepan Yu. Paranchych, and Lidia D. Paranchych "Elaboration of new uncooled detector materials highly sensitive in the near-IR region", Proc. SPIE 5209, Materials for Infrared Detectors III, (8 December 2003); https://doi.org/10.1117/12.516446

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available