How to reach a single-fundamental-mode operation in nitride VCSELs

Wlodzimierz Nakwaski; Pawel Mackowiak

doi:10.1117/12.531922

6 October 2003 How to reach a single-fundamental-mode operation in nitride VCSELs

Wlodzimierz Nakwaski, Pawel Mackowiak

Proceedings Volume 5230, Laser Technology VII: Progress in Lasers; (2003) https://doi.org/10.1117/12.531922
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

An advanced 3D model of a room-temperature (RT) continuous-wave (CW) VCSEL operation is used to investigate a possibility of reaching a RT CW single-fundamental-mode operation of nitride VCSELs. A nitride VCSEL of a traditional, double-ring-contacted structure has been found to generate at RT simultaneously many higher-order transverse modes which is a direct consequence of an unavoidable strong current-crowding effect at edges of its active region. Various possible structure modifications of nitride VCSELs have been examined to improve uniformity of the current injection into active regions which seems to be crucial for achieving their RT lasing operation and improving their mode selectivity. Both semi-transparent contacts and tunnel junctions have been suggested as useful tools to enhance considerably radial current flows in the nitride VCSEL structure. They should be, however, properly arranged within the laser cavity not only to improve the radial current sperding between the top ring contact and the centrally lcoated active region but also they should not introduce additional optical losses within a semi-transparent contact and highly doped tunnel junctions.

Citation Download Citation

Wlodzimierz Nakwaski and Pawel Mackowiak "How to reach a single-fundamental-mode operation in nitride VCSELs", Proc. SPIE 5230, Laser Technology VII: Progress in Lasers, (6 October 2003); https://doi.org/10.1117/12.531922

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