Studies Of The Si/SiO2 Interface Using Synchrotron Radiation

Michael H. Hecht; F. J. Grunthaner

doi:10.1117/12.946315

28 June 1985 Studies Of The Si/SiO2 Interface Using Synchrotron Radiation

Michael H. Hecht, F. J. Grunthaner

Proceedings Volume 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II; (1985) https://doi.org/10.1117/12.946315
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

Synchrotron radiation photoemission spectroscopy (SRPS) in the 1-4 KeV photon energy range is a useful tool for interface characterization. We present results of a series of studies of the near-interface region of Si/Si02 which confirm that a bond strain gradient exists in the oxide as a result of lattice mismatch. These experiments include measurement of photoemission lineshape changes as a function of photon energy, corresponding changes in the electron escape depth near the interface, and surface extended x-ray absorption fine structure (SEXAFS) measurements directly indicating the shortening of the Si-Si second nearest neighbor distance in the near-interface region of the oxide.

Citation Download Citation

Michael H. Hecht and F. J. Grunthaner "Studies Of The Si/SiO2 Interface Using Synchrotron Radiation", Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); https://doi.org/10.1117/12.946315

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