QsRAM: the new memory technology

Sima Dimitrijev; Herbert B. Harrison

doi:10.1117/12.531136

30 March 2004 QsRAM: the new memory technology

Proceedings Volume 5274, Microelectronics: Design, Technology, and Packaging; (2004) https://doi.org/10.1117/12.531136
Event: Microelectronics, MEMS, and Nanotechnology, 2003, Perth, Australia

Abstract

In this paper we suggest a new near ideal memory technology to replace existing FLASH and DRAM, the new technology being based on the semiconducting material Silicon Carbide (SiC). The technology will not only be a replacement for FLASH and DRAM but will open up new and novel applications because of its unique capabilities. We provide the reasons why SiC will become the next generation memory material and suggest new structures that will be exploited by a new company QsRAM that will lead the market push for these new memories.

Citation Download Citation

Sima Dimitrijev and Herbert B. Harrison "QsRAM: the new memory technology", Proc. SPIE 5274, Microelectronics: Design, Technology, and Packaging, (30 March 2004); https://doi.org/10.1117/12.531136

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