Experimental Investigations On The Oxidation Of Cobalt Disilicide(CoSi[sub]2[/sub])

SJ. Kim; T. C. Banwell; R. Shima; M. A. Nicolet

doi:10.1117/12.946481

9 April 1985 Experimental Investigations On The Oxidation Of Cobalt Disilicide(CoSi₂)

SJ. Kim, T. C. Banwell, R. Shima, M. A. Nicolet

Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946481
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

When a film of CoSi2 on a SiO2 substrate is thermally annealed in an oxidizing ambient in the temperature range, 750 - 1000°C, a SiO₂ layer grows on the surface by depleting the film of its Si. As a result, the chemical composition of the film passes through a sequence of silicides with increasing metal content. The film also breaks up into islands. This morphological instability is observed also for pure Co film on SiO₂ when annealed in vacuum. We show that less than 10 atomic percent of Si, or higher, in Co suppresses this instability under vacuum annealing. The oxidation of a CoSi₂ film on a Si <111> substrate establishes that the displacement of Si atoms against Co atoms in the silicide does not create a morphological instability. The irradiation of a film on SiO₂ prior to oxidation by Kr ions whose range is commensurate with the thickness of the film can partly suppress this instability during oxidation under certain circumstances.

Citation Download Citation

SJ. Kim, T. C. Banwell, R. Shima, and M. A. Nicolet "Experimental Investigations On The Oxidation Of Cobalt Disilicide(CoSi₂)", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); https://doi.org/10.1117/12.946481

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