Paper
2 April 1985 Spatial And Temporal Resolution Of The Nonlinear Optical Properties And Melt Dynamics Of Si At 1 μm
Arthur L. Smirl, Thomas F. Boggess, Ian W. Boyd, Steven C. Moss, K. Bohnert, Kamjou Mansour
Author Affiliations +
Proceedings Volume 0533, Ultrashort Pulse Spectroscopy and Applications; (1985) https://doi.org/10.1117/12.946545
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States
Abstract
We have recently demonstrated a passive, picosecond, Si optical-limiting switch for 1 micron radiation. Since this device functions below, at, and above the Si melting threshold, its operating characteristics are determined by a large number of mechanisms including nonlinear transmission, self-diffraction, nonlinear reflection, phase transitions, and resolidification morphologies. Here, we review measurements in which we apply a wide variety of picosecond spectroscopic techniques in order to characterize these optically-induced phenomena.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Arthur L. Smirl, Thomas F. Boggess, Ian W. Boyd, Steven C. Moss, K. Bohnert, and Kamjou Mansour "Spatial And Temporal Resolution Of The Nonlinear Optical Properties And Melt Dynamics Of Si At 1 μm", Proc. SPIE 0533, Ultrashort Pulse Spectroscopy and Applications, (2 April 1985); https://doi.org/10.1117/12.946545
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Cited by 4 scholarly publications.
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KEYWORDS
Silicon

Picosecond phenomena

Reflectivity

Absorption

Crystals

Liquids

Diffusion

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