Assignment of infrared absorption bands in ZnGeP2

Nancy C. Giles; Lihua Bai; Nelson Y. Garces; Thomas M. Pollak; Peter G. Schunemann

doi:10.1117/12.528279

14 June 2004 Assignment of infrared absorption bands in ZnGeP2

Nancy C. Giles, Lihua Bai, Nelson Y. Garces, Thomas M. Pollak, Peter G. Schunemann

Proceedings Volume 5337, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications III; (2004) https://doi.org/10.1117/12.528279
Event: Lasers and Applications in Science and Engineering, 2004, San Jose, Ca, United States

Abstract

Zinc germanium diphosphide (ZnGeP₂) is a nonlinear optical material useful for frequency conversion applications in the midinfrared. A broad absorption band peaking near 1.2 microns and extending past 2 microns is often observed. To identify the defects responsible for these absorption losses, we have performed an optical absorption investigation from 10 to 296 K on bulk crystals of ZnGeP₂ grown by the horizontal gradient-freeze method. Three broad absorption bands in the spectral range from 1 to 4 microns are observed that are due to native defects. Comparison of photoinduced changes in absorption with photoinduced changes in EPR spectra allowed specific defects to be associated with each of the three absorption bands. A band peaking near 1.2 microns and another band peaking near 2.2 microns involve transitions associated with singly ionized zinc vacancies. A third absorption band, peaking near 2.3 microns and extending from 1.5 microns to beyond 4 microns, involves neutral phosphorus vacancies. Absorption bands due to anion-site donor impurities Se and S have also been studied.

Citation Download Citation

Nancy C. Giles, Lihua Bai, Nelson Y. Garces, Thomas M. Pollak, and Peter G. Schunemann "Assignment of infrared absorption bands in ZnGeP2", Proc. SPIE 5337, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications III, (14 June 2004); https://doi.org/10.1117/12.528279

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