Paper
15 July 2004 Influence of gas on cutting silicon with solid state laser
Udo Klotzbach, Stephanie Maelzer, Thomas Kuntze, Michael Panzner, Michael Doetschel, F. Sonntag, Eckhard Beyer
Author Affiliations +
Abstract
For more than three decades the tool "laser" is used for cutting various materials. Thanks to its high degree of flexibility the laser nowadays becomes a real competitor to existing silicon wafer separating methods in semiconductor industry like grinding with dicing saws. Presently, laser micro maching of silicon wafers is done by solid state lasers with 1064nm or 532nm, processing with 355nm is increasingly investigated [5]. Especially the influence of the gas atmosphere on cutting speed and achievable quality is to be discussed in this paper.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Udo Klotzbach, Stephanie Maelzer, Thomas Kuntze, Michael Panzner, Michael Doetschel, F. Sonntag, and Eckhard Beyer "Influence of gas on cutting silicon with solid state laser", Proc. SPIE 5339, Photon Processing in Microelectronics and Photonics III, (15 July 2004); https://doi.org/10.1117/12.532133
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CITATIONS
Cited by 5 scholarly publications.
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KEYWORDS
Silicon

Laser cutting

Helium

Argon

Semiconductor lasers

Gases

Semiconducting wafers

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