Design optimization of InGaAlAs/GaAs single and double quantum well lasers emitting at 808 nm

Mariusz Zbroszczyk; Maciej Bugajski

doi:10.1117/12.529009

18 June 2004 Design optimization of InGaAlAs/GaAs single and double quantum well lasers emitting at 808 nm

Mariusz Zbroszczyk, Maciej Bugajski

Proceedings Volume 5349, Physics and Simulation of Optoelectronic Devices XII; (2004) https://doi.org/10.1117/12.529009
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

The laser diodes and laser bars with InGaAlAs/GaAs active region are attractive as high power devices operating at around 808 nm. The quaternary InGaAlAs active region seems to have distinctive advantages over the standard GaAs quantum well construction. The most important of them is that quantum wells, required to achieve desired wavelength can be wider, which provides better carrier confinement. Another advantage is better thermal conductivity of InGaAlAs as comparing to GaAs. We have modeled single and double quantum well separate confinement heterostructure lasers with various cavity lengths. The well thickness and indium content in the active region were optimized to obtain 808 nm wavelength with acceptable threshold current density. Numerical simulation based on the selfconsistent solution of drift diffusion equations, Schrödinger equation and photon rate equation has been used to optimize the high power lasers design. In this work we have used commercial simulation package PICS3D developed by Crosslight Soft. Inc.

Citation Download Citation

Mariusz Zbroszczyk and Maciej Bugajski "Design optimization of InGaAlAs/GaAs single and double quantum well lasers emitting at 808 nm", Proc. SPIE 5349, Physics and Simulation of Optoelectronic Devices XII, (18 June 2004); https://doi.org/10.1117/12.529009

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