Paper
6 July 2004 Semiconductor lasers for quantum sensing
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Abstract
Semiconductor lasers can be used simultaneously as optical sources and optical sensors, as they are extremely sensitive to a small amount of coherent optical feedback. We present a survey on experimental results on optical feedback in semiconductor lasers and on different approaches to describe its effect on the laser properties. We show that for long and moderate long external cavities (hundreds of meters down to centimeters) the Lang-Kobayashi delay model, multiple delays and multimode delay rate equation models are in very good agreement with experiments on edge emitting lasers (EELs) and vertical-cavity surface-emitting lasers (VCSELs). We present examples of frequency and polarization mode hopping, periodic and quasiperiodic behavior, different routes to chaos, regular pulse packages, high frequency pulsations and stochastic and coherence resonance, that all have been experimentally and numerically demonstrated. Suitable models for studying laser diodes subject to optical feedback from extremely short external cavity, or ESEC (of the order of the wavelength) are the composite cavity and the multimode butt coupling models that either consider the field amplitudes after multiple reflections in the external cavity (EC) as stationary or treat the whole compound cavity at once. Numerical and experimental studies showed that optical feedback in ESEC leads to detectable change of the laser output power or the voltage drop over the laser for a small change of either the phase or the optical feedback strength. As an example, we discuss experimental and numerical results on spectral and polarization properties of VCSELs subject of insensitive optical feedback from ESEC. The wavelength and the current of polarization switching between the two linearly polarized fundamental modes of the VCSEL are periodically modulated with the external cavity length. High contrast polarization switching is thus possible for quarter-wavelength change of external cavity length. In the case of EEL we experimentally demonstrate that with changing the length of the EC the emitted power, the wavelength and the laser voltage are periodically modulated. We explain the longitudinal mode-hopping between the neighboring composite cavity modes followed by large jumps at the external cavity frequency splitting as a result of the spectral modulation of the effective losses of the composite cavity system.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Krassimir P. Panajotov, Mikel Arizaleta, Virginia Gomez, Krzysztof Koltys, Andrzej Tabaka, Marc Sciamanna, Irina Veretennicoff, and Hugo Thienpont "Semiconductor lasers for quantum sensing", Proc. SPIE 5359, Quantum Sensing and Nanophotonic Devices, (6 July 2004); https://doi.org/10.1117/12.518317
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Cited by 4 scholarly publications.
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KEYWORDS
Vertical cavity surface emitting lasers

Polarization

Semiconductor lasers

Modulation

Picosecond phenomena

Switching

Reflectivity

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