1.3-µm VCSEL production issues

David W. Kisker; Leo M. F. Chirovsky; Ryan L. Naone; James M. Van Hove; Jennifer Marie Rossler; Martin Adamcyk; N. Wasinger; James G. Beltran; David Galt

doi:10.1117/12.539285

16 June 2004 1.3-μm VCSEL production issues

David W. Kisker, Leo M. F. Chirovsky, Ryan L. Naone, James M. Van Hove, Jennifer Marie Rossler, Martin Adamcyk, N. Wasinger, James G. Beltran, David Galt

Author Affiliations +

Proceedings Volume 5364, Vertical-Cavity Surface-Emitting Lasers VIII; (2004) https://doi.org/10.1117/12.539285
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

1.3 μm VCSELs have been under development for several years. In this work, we discuss several requirements and characteristics that allow a device to be manufacturable in high volume with excellent yield.

Citation Download Citation

David W. Kisker, Leo M. F. Chirovsky, Ryan L. Naone, James M. Van Hove, Jennifer Marie Rossler, Martin Adamcyk, N. Wasinger, James G. Beltran, and David Galt "1.3-μm VCSEL production issues", Proc. SPIE 5364, Vertical-Cavity Surface-Emitting Lasers VIII, (16 June 2004); https://doi.org/10.1117/12.539285

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