Advances in resist pattern transfer process using 157-nm lithography

Takamitsu Furukawa; Takuya Hagiwara; Etsurou Kawaguchi; Kentaro Matsunaga; Toshifumi Suganaga; Toshiro Itani; Kiyoshi Fujii

doi:10.1117/12.535177

14 May 2004 Advances in resist pattern transfer process using 157-nm lithography

Takamitsu Furukawa, Takuya Hagiwara, Etsurou Kawaguchi, Kentaro Matsunaga, Toshifumi Suganaga, Toshiro Itani, Kiyoshi Fujii

Author Affiliations +

Proceedings Volume 5376, Advances in Resist Technology and Processing XXI; (2004) https://doi.org/10.1117/12.535177
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

The bilayer process we developed for 157-nm lithography uses a fluorine-containing silsesquioxane-type resist (F-SSQ). Gate fabrication is done by using a F-SSQ(90 nm)/organic film(200 nm)/poly-Si(150 nm)/SiO₂(10 nm)/Si structure. The organic film works well as an anti-reflecting layer. Using a microstepper with a numerical aperture of 0.90 and optimizing the resist thickness, we made a 50-nm 1:1 line-and-space (L/S) pattern by using an alternative phase-shifting mask and made a 45-nm SRAM by using a chromeless phase lithography mask. Neither resist pattern footing nor undercutting was observed on the organic film. The reactive ion etching (RIE) selectivity between the F-SSQ and the organic film was sufficient (about 7), the resist pattern was transferred to the underlayer, and both 50-nm 1:1 L/S and 45-nm SRAM gate patterns were made using the organic film as an etching mask. Contact hole (C/H) fabrication is done by using a F-SSQ(105 nm)/organic film(400 nm)/tetraethyl orthosilicate (TEOS)-SiO₂(1200 nm)/Si structure, and we made a 75-nm 1:1 C/H pattern by using the microstepper with a binary mask. The RIE selectivity was sufficient (about 15) for making high-aspect-ratio contact holes, and we made a 75-nm 1:1 C/H pattern in 1200-nm-thick TEOS. This bilayer process is thus promising for making 65-nm-node semiconductor devices.

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Takamitsu Furukawa, Takuya Hagiwara, Etsurou Kawaguchi, Kentaro Matsunaga, Toshifumi Suganaga, Toshiro Itani, and Kiyoshi Fujii "Advances in resist pattern transfer process using 157-nm lithography", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.535177

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