Root cause analysis for crystal growth at ArF excimer laser lithography

Hiroyuki Ishii; Atsushi Tobita; Yusuke Shoji; Hiroko Tanaka; Akihiko Naito; Hiroyuki Miyashita

doi:10.1117/12.557701

20 August 2004 Root cause analysis for crystal growth at ArF excimer laser lithography

Hiroyuki Ishii, Atsushi Tobita, Yusuke Shoji, Hiroko Tanaka, Akihiko Naito, Hiroyuki Miyashita

Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557701
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan

Abstract

We investigated that the root cause of the crystal growth on the reticles at 193nm excimer laser lithography. We confirmed that crystal growth consisted of ammonia sulfate. We investigated the relationship between crystal growth and 3 factors; reticle cleaning condition, exposure environment, and storage environment. We reduced the residual sulfate ion on mask surface by optimizing cleaning condition. On the evaluation of the wafer fab, total exposure energy until crystal growth occurred were increased as residual sulfate ion is reduced by the cleaning condition optimization. In order to evaluate influence of exposure environment, we carried out an irradiation test under mixture of oxygen and nitrogen up to 10kJ/cm2. We did not observe crystal growth up to 10kJ/cm2. We suppose that crystal growth might be prevented by controlling chemical environment. Regarding storage environment, amount of sulfate ion on the mask surface was increased when it was stored in certain kind of box. Out-gas from storage box is one of sulfuric ion source.

Citation Download Citation

Hiroyuki Ishii, Atsushi Tobita, Yusuke Shoji, Hiroko Tanaka, Akihiko Naito, and Hiroyuki Miyashita "Root cause analysis for crystal growth at ArF excimer laser lithography", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557701

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