Temperature dependence of carrier dynamics in an inhomogeneous array of quantum dots

Huei C. Wong; Milan Dragas; G. Bob Ren; Judy M. Rorison; Mark Hopkinson

doi:10.1117/12.545058

1 September 2004 Temperature dependence of carrier dynamics in an inhomogeneous array of quantum dots

Huei C. Wong, Milan Dragas, G. Bob Ren, Judy M. Rorison, Mark Hopkinson

Proceedings Volume 5452, Semiconductor Lasers and Laser Dynamics; (2004) https://doi.org/10.1117/12.545058
Event: Photonics Europe, 2004, Strasbourg, France

Abstract

A model portraying the carrier dynamics for an inhomogeneous array of quantum dots (QDs) interacting with a number of photon modes is presented. The model treats an ensemble of QDs with one confined level coupled to a wetting layer or quantum well level and explicitly considers only the electrons. The model is derived by numerically solving a set of rate equations that includes the inhomogeneity of the dot size, multimode photon modes and temperature dependence. Explicitly the inhomogeneous size distribution is included within a inhomogeneous broadening parameter and the temperature dependence within the homogeneous broadening parameter as well as carrier thermal escape. This is similar to the well-known Sugawara model but in the Sugawara model the carriers are assumed to occupy the inhomogeneous quantum dots equally at all temperatures. Experimental and theoretical work in ref. (2) and (3) believes this is true only for a low temperature regime. Above the temperature where a global minima exists, Fermi-Dirac statistics have been used. This results in different gain and lasing behaviour for higher temperatures from those calculated using the Sugawara model.

Citation Download Citation

Huei C. Wong, Milan Dragas, G. Bob Ren, Judy M. Rorison, and Mark Hopkinson "Temperature dependence of carrier dynamics in an inhomogeneous array of quantum dots", Proc. SPIE 5452, Semiconductor Lasers and Laser Dynamics, (1 September 2004); https://doi.org/10.1117/12.545058

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