Pentacene organic field-effect transistors for flexible electronics

Oleg B. Shchekin; Robert Wenz; Robert Rotzoll; Michelle Grigas; Jon Barad; Klaus Dimmler; Ananth Dodabalapur

doi:10.1117/12.564261

18 October 2004 Pentacene organic field-effect transistors for flexible electronics

Oleg B. Shchekin, Robert Wenz, Robert Rotzoll, Michelle Grigas, Jon Barad, Klaus Dimmler, Ananth Dodabalapur

Proceedings Volume 5522, Organic Field-Effect Transistors III; (2004) https://doi.org/10.1117/12.564261
Event: Optical Science and Technology, the SPIE 49th Annual Meeting, 2004, Denver, Colorado, United States

Abstract

This paper presents electrical characteristics for high-performance pentacene-based organic field-effect transistors (OFETs) manufactured on polymer substrates. The mobilities as high as 2.13 cm²/V-s are reported for devices with a bottom-contact configuration and solution cast dielectric layers. The influence of the dielectric choice on pentacene structure and carrier mobility as well as a method for the improvement of current injection is discussed.

Citation Download Citation

Oleg B. Shchekin, Robert Wenz, Robert Rotzoll, Michelle Grigas, Jon Barad, Klaus Dimmler, and Ananth Dodabalapur "Pentacene organic field-effect transistors for flexible electronics", Proc. SPIE 5522, Organic Field-Effect Transistors III, (18 October 2004); https://doi.org/10.1117/12.564261

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