Modeling of PSD based on Schottky-barrier junction

Chilie Tan; Bin Lin; Dongyan Chen; Yuqing Chen

doi:10.1117/12.576667

17 January 2005 Modeling of PSD based on Schottky-barrier junction

Chilie Tan, Bin Lin, Dongyan Chen, Yuqing Chen

Proceedings Volume 5644, Optoelectronic Devices and Integration; (2005) https://doi.org/10.1117/12.576667
Event: Photonics Asia, 2004, Beijing, China

Abstract

Position Sensitive Detector (PSD) is a position sensor utilizing the lateral photoelectric effect produced by the non-uniform illumination of a rectifying semiconductor junction. Recently, mostly researches of PSD focus on the linear requirements or response characters of PSD with p-n junction. However, this paper concentrates on a novel characteristics of PSD based on the Schottky junction. This junction has many distinguished traits comparing with the p-n junction. Since the intrinsic excellent characteristics, the Schottky PSD has faster response and higher sensitivity to the incident radiation, lager current density, low current leakage and so on. This paper provides an analysis and model of the Schottky-barrier PSD lateral potential creation, response characteristic and position linearity condition with the Schottky junction, which is deduced by the charge conversation law and the model of carriers transport. All the study work is the theoretical basis for design of this junction with better performance.

Citation Download Citation

Chilie Tan, Bin Lin, Dongyan Chen, and Yuqing Chen "Modeling of PSD based on Schottky-barrier junction", Proc. SPIE 5644, Optoelectronic Devices and Integration, (17 January 2005); https://doi.org/10.1117/12.576667

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KEYWORDS

Sensors

Electrons

Semiconductors

Resistance

Metals

Photodiodes

Capacitance

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