Metrology Techniques for X-ray Lithography System Characterization

B. Fay; V. Nagaswami; L. Tai

doi:10.1117/12.949743

2 January 1986 Metrology Techniques for X-ray Lithography System Characterization

B. Fay, V. Nagaswami, L. Tai

Proceedings Volume 0565, Micron and Submicron Integrated Circuit Metrology; (1986) https://doi.org/10.1117/12.949743
Event: 29th Annual Technical Symposium, 1985, San Diego, United States

Abstract

Metrology techniques suitable for the characterization of X-ray lithography systems with submicron design rule capability are discussed in this paper. Registration and linewidth control are the main areas of investigation. Automated electrical measurements on special linewidth measuring test structures can be used for both registration and linewidth measurements. These techniques require some wafer processing steps. Other techniques that do not require special processing are the use of optical vernier structures for registration measurement and SEM analysis for linewidth measurement. Results obtained by these different techniques are presented and compared. Advantages, limitations and accuracy of each particular technique are discussed.

Citation Download Citation

B. Fay, V. Nagaswami, and L. Tai "Metrology Techniques for X-ray Lithography System Characterization", Proc. SPIE 0565, Micron and Submicron Integrated Circuit Metrology, (2 January 1986); https://doi.org/10.1117/12.949743

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