Paper
2 January 1986 Parametric Analysis Of The CD Control Obtained Using Advanced Wafer Steppers
Steven A. Lis
Author Affiliations +
Abstract
A parametric formula is presented which enables the determination of the CD control characteristics of a stepper from measurements of linewidth as a function of focus and exposure. The parameters obtained may be examined in terms of how they affect critical dimension control locally, and over the entire exposure field. Fundamental to the analysis is the ability to obtain large quantities of linewidth data. This problem is solved through the use of electrical test patterns. Experimental results of how this analysis has been used to examine several GCA steppers with state of the art reduction lenses is presented. A discussion is presented of how these resolution parameters are related to the reticle linewidth, exposure system, and various factors related both to the design of the stepper and processing of the wafers. Finally, an attempt is made to describe the exact physical meaning of each of the parameters in terms of their potential sources in the optical system.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Steven A. Lis "Parametric Analysis Of The CD Control Obtained Using Advanced Wafer Steppers", Proc. SPIE 0565, Micron and Submicron Integrated Circuit Metrology, (2 January 1986); https://doi.org/10.1117/12.949744
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconducting wafers

Lithography

Reticles

Integrated circuits

Metrology

Lenses

Critical dimension metrology

Back to Top