Studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure by picosecond Raman spectroscopy

W. Liang; Kong-Thon Tsen; C. Poweleit; Hadis Morkoc

doi:10.1117/12.592968

13 April 2005 Studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure by picosecond Raman spectroscopy

W. Liang, Kong-Thon Tsen, C. Poweleit, Hadis Morkoc

Author Affiliations +

Proceedings Volume 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX; (2005) https://doi.org/10.1117/12.592968
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

Velocity overshoot phenomenon for electrons as well as holes in a GaAs-based p-i-n nanostructure have been studied by using transient picosecond Raman spectroscopy. Under the picosecond laser excitation, we have found that the extent of velocity overshoot for electrons is comparable to holes. These experimental results have been explained in terms of various carrier scattering processes.

Citation Download Citation

W. Liang, Kong-Thon Tsen, C. Poweleit, and Hadis Morkoc "Studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure by picosecond Raman spectroscopy", Proc. SPIE 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX, (13 April 2005); https://doi.org/10.1117/12.592968

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