Paper
25 March 2005 Toward quantum-dot-based photonic integrated circuits
Lan Fu, Penny Lever, Sudha Mokkapati, Qiang Gao, Hark Hoe Tan, Chennupati Jagadish
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Abstract
In this paper, techniques of quantum dot interdiffusion such as impurity free vacancy disordering and ion implantation induced disordering as well as the selective area epitaxy by metal-organic chemical vapour deposition have been used to tune the emission wavelength of self-orgainsed quantum dot structures. Under optimized experimental conditions, large differential band gap energies have been achieved by all approaches which is essential for quantum dot-based photonic integrated circuits.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lan Fu, Penny Lever, Sudha Mokkapati, Qiang Gao, Hark Hoe Tan, and Chennupati Jagadish "Toward quantum-dot-based photonic integrated circuits", Proc. SPIE 5729, Optoelectronic Integrated Circuits VII, (25 March 2005); https://doi.org/10.1117/12.592313
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KEYWORDS
Annealing

Quantum wells

Gallium

Photonic integrated circuits

Gallium arsenide

Photomasks

Ion implantation

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