Dilute nitride type-II 'W' quantum well lasers for the near-infrared and mid-infrared

Jerry R. Meyer; Igor Vurgaftman; Anish A. Khandekar; B. E. Hawkins; J. Y. Yeh; Luke J. Mawst; Thomas F. Kuech; Nelson Tansu

doi:10.1117/12.597115

1 April 2005 Dilute nitride type-II 'W' quantum well lasers for the near-infrared and mid-infrared

Jerry R. Meyer, Igor Vurgaftman, Anish A. Khandekar, B. E. Hawkins, J. Y. Yeh, Luke J. Mawst, Thomas F. Kuech, Nelson Tansu

Author Affiliations +

Proceedings Volume 5738, Novel In-Plane Semiconductor Lasers IV; (2005) https://doi.org/10.1117/12.597115
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

Dilute nitride type-II "W" structures have potential for lasing at 1.55 microns (on GaAs substrates) and in the mid-infrared (3-6 microns, on InP substrates). The former active regions utilize (In)GaAsN/GaAsSb/(In)GaAsN/GaAs quantum wells, whereas the latter are based on InAsN/GaAsSb/InAsN/GaInP structures. Following a review of the theoretical rationale, we will present some preliminary MOCVD growth results for the GaAs-based type-II structures, along with their characterization by x-ray, TEM, and photoluminescence. The experimental energy gaps corresponding to the layer compositions determined from characterization are in good agreement with calculations based on the 10-band k×p formalism.

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Jerry R. Meyer, Igor Vurgaftman, Anish A. Khandekar, B. E. Hawkins, J. Y. Yeh, Luke J. Mawst, Thomas F. Kuech, and Nelson Tansu "Dilute nitride type-II 'W' quantum well lasers for the near-infrared and mid-infrared", Proc. SPIE 5738, Novel In-Plane Semiconductor Lasers IV, (1 April 2005); https://doi.org/10.1117/12.597115

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